Electronic properties of two coupled Si delta-doped GaAs structures
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The electronic properties such as the effective potential, the density profile, the subband energies, the subband populations and Fermi energy have been calculated by solving Schrodinger and Poisson equations self-consistently. In this study, we have seen that the subband structure is quite sensitive to the separation between the two doping layers. We conclude that, if the coupling between two delta-doped GaAs layers is significant, the mobility of electrons in this structure is very high compared to single delta-doped structures because of the strong overlap between the electrons and the ionized donors in single delta-doped structures.