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dc.contributor.authorKasapoglu, E
dc.contributor.authorSari, H
dc.contributor.authorBursal, M
dc.contributor.authorSokmen, I
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:23:41Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:23:41Z
dc.date.issued2003
dc.identifier.issn1386-9477
dc.identifier.urihttps://dx.doi.org/10.1016/S1386-9477(02)00671-9
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11417
dc.descriptionWOS: 000181516700010en_US
dc.description.abstractThe binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show that the exciton binding energies, and optical absorption depend on the sizes of the wire and strength of the electric field. The additional confinement of particles in quantum well wire offers greater variety of electric field dependence in comparison to bulk materials and quantum well structures. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/S1386-9477(02)00671-9en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectquantum well-wiresen_US
dc.subjectelectric fielden_US
dc.subjectexciton absorptionen_US
dc.titleExciton absorption in quantum-well wires under the electric fielden_US
dc.typearticleen_US
dc.relation.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.identifier.volume16en_US
dc.identifier.issue2en_US
dc.identifier.endpage243en_US
dc.identifier.startpage237en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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