dc.contributor.author | Ozturk, E | |
dc.contributor.author | Ergun, Y | |
dc.contributor.author | Sari, H | |
dc.contributor.author | Sokmen, I | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T10:24:40Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T10:24:40Z | |
dc.date.issued | 2001 | |
dc.identifier.issn | 0947-8396 | |
dc.identifier.uri | https://dx.doi.org/10.1007/s003390100857 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/11587 | |
dc.description | WOS: 000172407900017 | en_US |
dc.description.abstract | In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping concentration and the delta -layer thickness on the sub-band structure for a non-uniform distribution, which is taken as different from the known Gaussian distribution. The confining potential, the sub-band energies, the sub-band occupations, and the Fermi energy have been calculated by solving the Schrodinger and Poisson equations by using the Airy functions self-consistently. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | SPRINGER-VERLAG | en_US |
dc.relation.isversionof | 10.1007/s003390100857 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.title | The self-consistent calculation of Si delta-doped GaAs structures | en_US |
dc.type | article | en_US |
dc.relation.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | en_US |
dc.contributor.department | Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuzeylul Univ, Dept Phys, TR-35182 Izmir, Turkey | en_US |
dc.contributor.authorID | OZTURK, EMINE -- 0000-0003-2508-0863 | en_US |
dc.identifier.volume | 73 | en_US |
dc.identifier.issue | 6 | en_US |
dc.identifier.endpage | 754 | en_US |
dc.identifier.startpage | 749 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |