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dc.contributor.authorOzturk, E
dc.contributor.authorErgun, Y
dc.contributor.authorSari, H
dc.contributor.authorSokmen, I
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:25:19Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:25:19Z
dc.date.issued2000
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1006/spmi.2000.0848
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11683
dc.descriptionWOS: 000088722500004en_US
dc.description.abstractWe have theoretically investigated the subband structure of single Si delta-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the delta-doping concentration, the delta-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two different models: (i) a uniform distribution and (ii) a nonuniform distribution. In this paper, the nonuniform distribution is different from the Gaussian distribution use of other authors. The electronic structures have been calculated by solving the Schrodinger and Poisson equations self-consistently. We thus find the confining potential, the subband energies and their eigen envelope functions, the subband occupations and Fermi energy. (C) 2000 Academic Press.en_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTDen_US
dc.relation.isversionof10.1006/spmi.2000.0848en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGaAs structuresen_US
dc.subjectSi delta-dopeden_US
dc.titleElectronic subband of single Si delta-doped GaAs structuresen_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.departmentCumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- Dokuz Eylul Univ, Dept Phys, Izmir, Turkeyen_US
dc.contributor.authorIDOZTURK, EMINE -- 0000-0003-2508-0863en_US
dc.identifier.volume28en_US
dc.identifier.issue1en_US
dc.identifier.endpage45en_US
dc.identifier.startpage35en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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