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The electronic structure of a quantum well under an applied electric field

dc.contributor.authorSari, H
dc.contributor.authorErgun, Y
dc.contributor.authorSokmen, I
dc.contributor.authorTomak, M
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T10:38:47Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T10:38:47Z
dc.date.issued1996
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1006/spmi.1996.0063
dc.identifier.urihttps://hdl.handle.net/20.500.12418/11899
dc.descriptionWOS: A1996VH65300005en_US
dc.description.abstractThe effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined critically. For higher electric field values it is shown that the quasi-bound state approximation for the ground and first excited state of the electron, and for the ground state of the hole is valid. (C) 1996 Academic Press Limiteden_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTDen_US
dc.relation.isversionof10.1006/spmi.1996.0063en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe electronic structure of a quantum well under an applied electric fielden_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.departmentMIDDLE E TECH UNIV,DEPT PHYS,TR-06531 ANKARA,TURKEYen_US
dc.identifier.volume20en_US
dc.identifier.issue2en_US
dc.identifier.endpage172en_US
dc.identifier.startpage163en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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