Binding energies of excitons in symmetric and asymmetric coupled double-quantum well structures in a magnetic field

Abstract

The binding energy of excitons in the symmetric and asymmetric coupled double GaAs/$Ga_{1-x}Al_xAs$ quantum wells is calculated by using variational approach. Results have been obtained as a function of the potential symmetry, the size of the quantum well, and the coupling parameter of the wells in the presence of a magnetic field applied parallel to the growth direction. The role of the asymmetric barriers, magnetic field, barrier and well width in determining the tunability of the excitonic binding parameters of the GaAs/$Ga_{1-x}Al_xAs$ system is discussed.

The binding energy of excitons in the symmetric and asymmetric coupled double GaAs/$Ga_{1-x}Al_xAs$ quantum wells is calculated by using variational approach. Results have been obtained as a function of the potential symmetry, the size of the quantum well, and the coupling parameter of the wells in the presence of a magnetic field applied parallel to the growth direction. The role of the asymmetric barriers, magnetic field, barrier and well width in determining the tunability of the excitonic binding parameters of the GaAs/$Ga_{1-x}Al_xAs$ system is discussed.