Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 μm range
Date
2022/6/1Author
Alaydin, Behçet ÖzgürGaulke, Marco
Heidrich, Jonas
Golling, Matthias
Barh, Ajanta
Keller, Ursula
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B. ÖZGÜR ALAYDIN,1,2,3 MARCO GAULKE,1,3,* JONAS HEIDRICH,1 MATTHIAS GOLLING,1 AJANTA BARH,1 AND URSULA KELLER1 1ETH Zurich, Department of Physics, Institute for Quantum Electronics, Auguste-Piccard-Hof 1, Zurich 8093, Switzerland 2Current address: Sivas Cumhuriyet University, Department of Physics, Turkey 3The authors contributed equallyAbstract
We present the detailed growth and characterization of novel GaSb-based semiconductor saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These SESAMs at different wavelengths are bandgap engineered using ternary material compositions and without strain compensation. We observe that even when the thickness of quantum wells (QWs) exceeds the critical thickness we obtain strain relaxed SESAMs that do not substantially increase nonsaturable losses. SESAMs have been fabricated using molecular beam epitaxy with a AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) and strained type-I InxGa1-xSb or type-II W-like AlSb/InAs/GaSb QWs in the absorber region. All the type-I SESAMs show excellent performance, which is suitable for modelocking of diode-pumped semiconductor, ion-doped solid-state, and thin-disk lasers. The recovery time of the type-II SESAM is too long which can be interesting for laser applications. The dependence of the SESAM design, based on its QW number, barrier material, and operation wavelength are investigated. A detailed characterization is conducted to draw conclusions from macroscopic nonlinear and transient absorption properties at different wavelengths in the 2–2.4 µm range for the corresponding devices.
Volume
12URI
https://opg.optica.org/ome/fulltext.cfm?uri=ome-12-6-2382&id=476334https://hdl.handle.net/20.500.12418/13532