Search
Now showing items 1-2 of 2
The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2010)
Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations ...
Subband structure of p-type delta-doped GaAs as dependent on the acceptor concentration and the layer thickness
(CAMBRIDGE UNIV PRESS, 2008)
For a uniform distribution we have theoretically studied the subband structure of p-type delta-doped GaAs inserted into a quantum well at T = 0 K. We will investigate the influence of the delta-doping concentration and the ...