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Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2018)
In this paper, the optical and electronic properties of asymmetric triple quantum well (ATQW) structures are studied depending on the indium concentrations while quantum well (QW) thicknesses and barrier widths are kept ...
The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells
(ELSEVIER SCIENCE BV, 2018)
In this study, the electronic properties of symmetric and asymmetric double Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells have been investigated depending on the barrier width. Using the effective mass approach, ...