Search
Now showing items 1-10 of 20
Electronic subband of single Si delta-doped GaAs structures
(ACADEMIC PRESS LTD, 2000)
We have theoretically investigated the subband structure of single Si delta-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the delta-doping concentration, the delta-layer thickness and ...
The self-consistent calculation of Si delta-doped GaAs structures
(SPRINGER-VERLAG, 2001)
In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping ...
Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field
(ACADEMIC PRESS LTD, 1999)
The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/Ga1-xAlxAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a ...
The electronic structure of a quantum well under an applied electric field
(ACADEMIC PRESS LTD, 1996)
The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined ...
The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Double quantum well electronic energy spectrum within a tilted magnetic field
(ACADEMIC PRESS LTD, 1999)
The analytical solutions of the Schrodinger equation for a double quantum well structure (DQWS) subjected to an externally applied tilted magnetic field are obtained and the results are discussed. The dependency of the ...
Electronic properties of Si delta-doped GaAs under an applied electric field
(IOP PUBLISHING LTD, 2001)
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ...
Si delta-doped GaAs structure with different dopant distribution models
(AMER INST PHYSICS, 2002)
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...