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Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field
(SPRINGER, 2012)
The effects of intense laser radiation on the exciton states in GaAs-Ga1-xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations ...
Intense Laser Field Effects on the Shallow-Donor Impurity States in Rectangular-Shaped Quantum Well Wires
(POLISH ACAD SCIENCES INST PHYSICS, 2014)
Using the effective mass and parabolic band approximations, the binding energy of a shallow donor impurity is calculated in a GaAs-(Ga,Al)As quantum well wire of rectangular transversal section, under the combined effects ...
Donor impurity states and related optical responses in triangular quantum dots under applied electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2014)
The linear and nonlinear coefficients for the optical absorption and relative refractive index change associated with transitions between donor impurity states in a two-dimensional quantum dot of triangular shape under ...
Electron-related optical responses in triangular quantum dots
(ELSEVIER SCIENCE BV, 2014)
The linear and nonlinear coefficients for the optical absorption and relative refractive index change associated with intersubband transitions of electrons in the conduction band of a two-dimensional quantum dot of triangular ...
Electron-related optical responses in Gaussian potential quantum wells: Role of intense laser field
(ELSEVIER SCIENCE BV, 2018)
A theoretical study of the effects of non-resonant intense laser field on the optical response in a Gaussian potential quantum well is performed in the framework of the effective mass approximation. The obtained results ...
THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2011)
The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our ...
Intense laser field effects on the intersubband optical absorption and refractive index change in the delta-doped GaAs quantum wells
(ELSEVIER SCIENCE BV, 2017)
In this paper, we have investigated the effects of the non-resonant intense laser field on the electronic and optical properties such as linear, nonlinear and the total optical absorption coefficient and refractive index ...
Study of electron-related optical responses in the Tietz-Hua quantum well: Role of applied external fields
(ELSEVIER SCIENCE BV, 2018)
In the present study, we theoretically reported the effects of applied external fields, such as intense laser field and electric and magnetic fields, on the optical absorption coefficient and refractive index changes in ...
Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field
(SPRINGER, 2011)
Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs ...
Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well
(ELSEVIER SCIENCE BV, 2012)
The effects of an intense, high-frequency laser field linearly polarized along the growth direction on the binding energy of excitons confined in a GaInNAs/GaAs quantum well is computed for different nitrogen and indium ...