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ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and ...
Binding energies of donor impurities in modulation-doped GaAs/AlxGa1-xAs double quantum wells under an electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al0.33Ga0.67 As double quantum wells (DQWs) under an electric field which is applied along the ...