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ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and ...
Binding energies of donor impurities in modulation-doped GaAs/AlxGa1-xAs double quantum wells under an electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al0.33Ga0.67 As double quantum wells (DQWs) under an electric field which is applied along the ...
Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on ...
FINITE ELEMENT ANALYSIS OF VALENCE BAND STRUCTURE OF SQUARE QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
Valence band structure with spin-orbit (SO) coupling of GaAs/Ga1-xAlxAs square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband ...
Binding energy of donor impurities in double inverse parabolic quantum well under electric field
(ELSEVIER SCIENCE BV, 2009)
In this study, effects of the electric field applied along the growth direction on the binding energy of donor impurities in double inverse parabolic quantum well (DIPQW) with different well and barrier widths, as well as ...