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The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Intersubband electron transition across a staircase potential containing quantum wells: light emission
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2005)
We present a theoretical investigation of a novel staircase-like light emitter based on the GaAs/GaxAl1-xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ...
Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...