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Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
(ELSEVIER SCIENCE BV, 2010)
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor ...
Optical response in a laser-driven quantum pseudodot system
(ELSEVIER SCIENCE BV, 2017)
We investigate theoretically the intense laser-induced optical absorption coefficients and refractive index changes in a two-dimensional quantum pseudodot system under an uniform magnetic field. The effects of non-resonant, ...
Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double delta-doped GaAs quantum well
(ELSEVIER SCIENCE BV, 2017)
In the present work, the effects of the non-resonant intense laser field, electric and magnetic fields on the optical properties, such as linear, third order nonlinear and the total optical absorption coefficient and ...
Optical properties of the Tietz-Hua quantum well under the applied external fields
(ELSEVIER SCIENCE BV, 2017)
In this study, the effects of the electric and magnetic fields as well as structure parameter-gamma on the total absorption coefficient, including linear and third order nonlinear absorption coefficients for the optical ...
Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field
(ELSEVIER SCIENCE BV, 2013)
The effect of indium and nitrogen mole concentrations on the nonlinear optical properties in a Ga1-xInxNyAs1-y/GaAs single quantum well under the intense laser field is theoretically studied within the effective mass ...
Intense Laser Field Effects on the Shallow-Donor Impurity States in Rectangular-Shaped Quantum Well Wires
(POLISH ACAD SCIENCES INST PHYSICS, 2014)
Using the effective mass and parabolic band approximations, the binding energy of a shallow donor impurity is calculated in a GaAs-(Ga,Al)As quantum well wire of rectangular transversal section, under the combined effects ...
Electron-related optical responses in Gaussian potential quantum wells: Role of intense laser field
(ELSEVIER SCIENCE BV, 2018)
A theoretical study of the effects of non-resonant intense laser field on the optical response in a Gaussian potential quantum well is performed in the framework of the effective mass approximation. The obtained results ...
Intense laser field effects on the intersubband optical absorption and refractive index change in the delta-doped GaAs quantum wells
(ELSEVIER SCIENCE BV, 2017)
In this paper, we have investigated the effects of the non-resonant intense laser field on the electronic and optical properties such as linear, nonlinear and the total optical absorption coefficient and refractive index ...
Study of electron-related optical responses in the Tietz-Hua quantum well: Role of applied external fields
(ELSEVIER SCIENCE BV, 2018)
In the present study, we theoretically reported the effects of applied external fields, such as intense laser field and electric and magnetic fields, on the optical absorption coefficient and refractive index changes in ...
The effects of intense laser field on optical responses of n-type delta doped GaAs quantum well under applied electric and magnetic fields
(ELSEVIER GMBH, URBAN & FISCHER VERLAG, 2018)
This work presents the results of the theoretical study of the effects of non-resonant intense laser field, electric and magnetic fields on optical responses of GaAs n-type delta-doped quantum well associated to the electron ...