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Now showing items 11-14 of 14
Intersubband transitions in quantum wells under intense laser field
(SPRINGER, 2005)
An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effective-mass approximation. Results obtained show that intersubbband optical ...
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...
The dependence of the intersubband transitions in square and graded QWs on intense laser fields
(PERGAMON-ELSEVIER SCIENCE LTD, 2004)
The intersubband absorption in square and graded quantum wells under a laser field is calculated within the framework of the effective mass approximation. We conclude that, for quantum wells with different shapes, the laser ...