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Binding energy and optical absorption of donor impurity states in "12-6" tuned GaAs/GaAlAs double quantum well under the external fields
(ELSEVIER SCIENCE BV, 2019)
We have investigated the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s -> 2s absorption coefficient, including the first and third order corrections, in "12-6" ...
Linear and nonlinear optical properties in a double inverse parabolic quantum well under applied electric and magnetic fields
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2014)
In the present work, the effects of electric and magnetic fields on the optical absorption coefficient and refractive index changes associated with intersubband transitions in a GaAs/AlxGa1-xAs double inverse parabolic ...
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well
(WILEY-V C H VERLAG GMBH, 2012)
The effects of intense laser radiation on the exciton states in GaAs-Ga1xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations ...
Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field
(ELSEVIER SCIENCE BV, 2012)
We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed ...