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Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
(ELSEVIER SCIENCE BV, 2010)
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor ...
The effect of nitrogen on the diamagnetic susceptibility of a donor in GaxIn1-xNyAs1-y/GaAs quantum well under the magnetic field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2010)
The binding energy and diamagnetic susceptibility of a hydrogenic donor in a GaxIn1-xNyAs1-y/GaAs quantum well has investigated in the presence of the magnetic field by using a trial wave function in the framework of the ...
The effects of pressure and barrier height on donor binding energy in GaAs/Ga1-xAlxAs cylindrical quantum well wires
(ELSEVIER SCIENCE BV, 2010)
The ground state binding energy of axial hydrogenic impurity in GaAs/Ga1-xAlxAs cylindrical quantum well wires (CQWWs) are investigated as a function of the barrier height and the radius of the wire under hydrostatic ...