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Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well
(SPRINGER, 2012)
Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs ...