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Resonant peaks of the linear optical absorption and rectification coefficients in GaAs/GaAlAs quantum well: Combined effects of intense laser, electric and magnetic fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2015)
In this study, the resonant peaks of the linear optical absorption (OA) and rectification coefficients in GaAs/GaAlAs quantum well are calculated as dependent on the applied electric field (F), the magnetic field (B) and ...
Comparison of Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells as dependent on Al and In concentrations under intense laser field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2015)
In this study, the electronic properties of Ga1-xAlxAs/GaAs and Ga(1-x)ln(x)As/GaAs quantum wells (QWs) are theoretically calculated as dependent on the intense laser field (ILF) and x-concentration value within the effective ...