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Nonlinear optical rectification and the second and third harmonic generation in Poschl-Teller quantum well under the intense laser field
(ELSEVIER SCIENCE BV, 2012)
In this work, the effect of a non-resonant intense laser field on the optical rectification and second and third harmonic generation in a Poschl-Teller quantum well is theoretically investigated. In this regard, the ...
Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: Effects of applied electromagnetic fields
(ELSEVIER SCIENCE BV, 2012)
In this work we are studying the intense laser effects on the electron-related linear and nonlinear optical properties in GaAs-Ga1-xAlxAs quantum wells under applied electric and magnetic fields. The calculated quantities ...
OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2012)
The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well ...
Effects of applied electromagnetic fields on the linear and nonlinear optical properties in an inverse parabolic quantum well
(ELSEVIER SCIENCE BV, 2012)
In this present work, we have investigated theoretically the effects of applied electric and magnetic fields on the linear and nonlinear optical properties in a GaAs/AlxGa1-xAs inverse parabolic quantum well for different ...
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field
(SPRINGER, 2012)
The effects of intense laser radiation on the exciton states in GaAs-Ga1-xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations ...
Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well
(ELSEVIER SCIENCE BV, 2012)
The effects of an intense, high-frequency laser field linearly polarized along the growth direction on the binding energy of excitons confined in a GaInNAs/GaAs quantum well is computed for different nitrogen and indium ...
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well
(WILEY-V C H VERLAG GMBH, 2012)
The effects of intense laser radiation on the exciton states in GaAs-Ga1xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations ...
Electronic band structure of GaAs/AlxGa1-xAs superlattice in an intense laser field
(ELSEVIER SCIENCE BV, 2012)
We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed ...
The effects of hydrostatic pressure and intense laser field on the linear and nonlinear optical properties of a square quantum well
(ELSEVIER SCIENCE BV, 2012)
In this paper, the effects of hydrostatic pressure, temperature and intense laser field on the linear and non-linear optical processes in the conduction band of a square quantum well are numerically investigated in the ...