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OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2012)
The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well ...