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dc.contributor.authorÖztürk E.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:13:03Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:13:03Z
dc.date.issued2002
dc.identifier.issn1300-0101
dc.identifier.urihttps://hdl.handle.net/20.500.12418/4589
dc.description.abstractWe investigated theoretically the change of electronic properties of Si ?-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject?-doped GaAsen_US
dc.subjectElectronic structureen_US
dc.subjectTemperature-dependenceen_US
dc.titleThe temperature dependence of the electronic structure of Si ?-doped GaAsen_US
dc.typearticleen_US
dc.relation.journalTurkish Journal of Physicsen_US
dc.contributor.departmentÖztürk, E., Cumhuriyet University, Department of Physics, 58140 Sivas, Turkeyen_US
dc.identifier.volume26en_US
dc.identifier.issue6en_US
dc.identifier.endpage471en_US
dc.identifier.startpage465en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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