Non-linear dynamics in a graded quantum well placed in a GaAlAs p-n junction
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Theoretical and experimental results concerning the study of a novel wavelength converter amplifier, which can be tuned, with the amplification of an external voltage are presented. The device consists of a Ga1-xAlx As graded (0.15<x<0) quantum well, placed on the n-side of the depletion region of a Ga1-xAlx As (x=0.30) p-n junction. As a result of the competition between the built-in field and the grading, in the absence of an external bias, the quantum well acts as an isolated well. Forward biasing of the junction reduces the built-in field; thus the field associated with the grading becomes effective. The tuning of the operation wavelength is based on the anti - Quantum Confined Stark Effect (QCSE) and achieved during the forward biasing. In this study we present the numerical results based on a 2D modelling of the device where exciton binding energy, absorption co-efficient and transition energy are obtained as a function of applied field. Experimental results show a tuning range of around 40nm. © 2001 SPIE.