Konu "GaAs semiconductor" için Rektörlüğe Bağlı Bölümler listeleme
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CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2018)The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600 degrees C and 700 degrees C for 1 min. The apparent barrier height Phi(ap) and ideality factor of the diodes were calculated from ...