dc.contributor.author | Şenadim Tüzemen E. | |
dc.contributor.author | Şahin H. | |
dc.contributor.author | Kara K. | |
dc.contributor.author | Elagöz S. | |
dc.contributor.author | Esen R. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:32:09Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:32:09Z | |
dc.date.issued | 2014 | |
dc.identifier.issn | 1300-0101 | |
dc.identifier.uri | https://dx.doi.org/10.3906/fiz-1301-17 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/5466 | |
dc.description | TUBITAK | en_US |
dc.description.abstract | A ZnO:Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO:Al thin film was thermally annealed for 1 h at 2 di erent temperatures in air. The film structure was investigated as a function of annealing temperature by X-ray diffraction (XRD). ZnO:Al film annealed at 500 °C by PFCVAD method resulted in an amorphous film. However, after annealing ZnO:Al film at 600 ° C, it showed (100) and (002) peaks at around 32° and 34°, respectively. The chemical state of ZnO:Al (AZO) film on GaAs substrate was investigated by using X-ray photoelectron spectroscopy (XPS). The dependence of optical properties on annealing was investigated by using a UV-VIS-NIR spectrophotometer. We also obtained the energy gap of ZnO:Al thin film by diffused reectance spectra using the Kubelka-Munk function. © TÜBITAK. | en_US |
dc.description.sponsorship | Şenadim Tüzemen, E.; Nanotechnology Center, Department of Physics, Cumhuriyet University, Sivas, Turkey; email: esenadim@cumhuriyet.edu.tr | en_US |
dc.language.iso | eng | en_US |
dc.relation.isversionof | 10.3906/fiz-1301-17 | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Al-doped zinc oxide | en_US |
dc.subject | Annealing temperature | en_US |
dc.subject | Diffuse and specular reflectance | en_US |
dc.subject | Optical band gap | en_US |
dc.title | XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate | en_US |
dc.type | article | en_US |
dc.relation.journal | Turkish Journal of Physics | en_US |
dc.contributor.department | Şenadim Tüzemen, E., Nanotechnology Center, Department of Physics, Cumhuriyet University, Sivas, Turkey -- Şahin, H., Nanotechnology Center, Department of Physics, Cumhuriyet University, Sivas, Turkey -- Kara, K., Department of Physics, Çukurova University, Adana, Turkey -- Elagöz, S., Nanotechnology Center, Department of Physics, Cumhuriyet University, Sivas, Turkey -- Esen, R., Department of Physics, Çukurova University, Adana, Turkey | en_US |
dc.identifier.volume | 38 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.endpage | 117 | en_US |
dc.identifier.startpage | 111 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |