Nonlinear transitions in single, double, and triple ?-doped GaAs structures

Abstract

In this study, the intersubband optical absorption coefficient and the refractive index change in single, double, and triple delta-doped GaAs structure will investigate for the uniform doping distribution model. The electronic properties of the structure such as potential profile, subband energies and wave functions will be calculated by solving the Schrödinger and the Poisson equations self-consistently. Dependence on different doping wells of the intersubbands nonlinear transitions is more important for potential variations in photodetectors and optical modulators. These structures will play a key role in researches of quantum electronics and photonic devices in future. © 2017, Editura Academiei Romane. All rights reserved.