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dc.contributor.authorOzturk, O.
dc.contributor.authorOzturk, E.
dc.contributor.authorElagoz, S.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:03Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:03Z
dc.date.issued2019
dc.identifier.issn0256-307X
dc.identifier.issn1741-3540
dc.identifier.urihttps://dx.doi.org/10.1088/0256-307X/36/6/067801
dc.identifier.urihttps://hdl.handle.net/20.500.12418/5889
dc.descriptionWOS: 000470208700022en_US
dc.description.abstractFor square-step quantum wells (SSQWs) and graded-step quantum wells (GSQWs), the nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) coefficients under an intense laser field (ILF) are analyzed. The found results indicate that ILF can ensure a vital influence on the shape and height of the confined potential profile of both SSQWs and GSQWs, and alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential. According to the results, the potential profile and height of the GSQWs are affected more significantly by ILF intensity compared to SSQWs. These results indicate that NOR, SHG and THG coefficients of SSQWs and GSQWs may be calibrated in a preferred energy range and the magnitude of the resonance peak (RP) by tuning the ILF parameter. It is feasible to classify blue or red shifts in RP locations of NOR, SHG and THG coefficients by varying the ILF parameter. Our results can be useful in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.en_US
dc.language.isoengen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.isversionof10.1088/0256-307X/36/6/067801en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleNonlinear Optical Rectification, Second and Third Harmonic Generations in Square-Step and Graded-Step Quantum Wells under Intense Laser Fielden_US
dc.typearticleen_US
dc.relation.journalCHINESE PHYSICS LETTERSen_US
dc.contributor.department[Ozturk, O.] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Ozturk, E.] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey -- [Elagoz, S.] ASELSAN Microelect Guidance & Electroopt, Ankara, Turkeyen_US
dc.identifier.volume36en_US
dc.identifier.issue6en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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