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dc.contributor.authorUngan, F.
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorSari, H.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:04Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:04Z
dc.date.issued2019
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.urihttps://dx.doi.org/10.1007/s11664-019-07102-z
dc.identifier.urihttps://hdl.handle.net/20.500.12418/5898
dc.descriptionWOS: 000466899200016en_US
dc.description.abstractThe effects of non-resonant intense laser fields on the intersubband-related light absorption and relative refractive index change coefficients in symmetric and asymmetric n-type double -doped GaAs quantum wells are investigated. Systems are assumed to be also under the influence of hydrostatic pressure and the change of temperature. The single band effective-mass and envelope function approximations, together with analytical expressions for the linear and third-order nonlinear optical coefficients are used as theoretical tools. According to the numerical outcome, the nonlinear optical response is significantly affected by the intense non-resonant laser radiation, as a result of the associated distortion of conduction band energy profiles. For instance, it is revealed there is a laser-induced transition of the confining potential from double-delta geometry to single-triangular-like shape. Given the additional variations associated with the application of hydrostatic pressure and temperature, all these external probes could be used to control and suitablly tune the electronic and optical properties of GaAs n-type double -doped GaAs quantum wells.en_US
dc.language.isoengen_US
dc.publisherSPRINGERen_US
dc.relation.isversionof10.1007/s11664-019-07102-zen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDelta-doped quantum wellen_US
dc.subjectoptical responseen_US
dc.subjectintense laser fielden_US
dc.subjecthydrostatic pressureen_US
dc.titleHydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Fielden_US
dc.typearticleen_US
dc.relation.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.contributor.department[Ungan, F.] Sivas Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, Turkey -- [Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Inst Invest Ciencias Basicas & Aplicadas, Ctr Invest Ciencias, Av Univ 1001, Cuernavaca 62209, Morelos, Mexico -- [Sari, H.] Sivas Cumhuriyet Univ, Fac Educ, Dept Math & Nat Sci Educ, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35160 Izmir, Turkeyen_US
dc.identifier.volume48en_US
dc.identifier.issue6en_US
dc.identifier.endpage3546en_US
dc.identifier.startpage3537en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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