dc.contributor.author | Demir, Ilkay | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:37:08Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:37:08Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | https://dx.doi.org/10.1016/j.spmi.2019.01.007 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/5942 | |
dc.description | WOS: 000463693300001 | en_US |
dc.description.abstract | We report the effects of AsH3 (arsine) on morphological, structural, optical and crystalline quality of MOVPE (metal organic vapor phase epitaxy) grown GaAs/Ge heterostructures. AsH3 pre-flow supplied on Ge substrate to have As atoms as a first atomic layer on the surface of Ge substrate. Additionally, the V/III ratio effects of LT-GaAs buffer layer, grown on arsenized Ge substrate, have been analyzed to have reduced APBs (anti-phase boundaries) in the interface between epilayer and Ge substrate. It has been considered that the optimal AsH3 pre-flow duration and V/III ratio of GaAs buffer layer extremely influence the effects of APBs even we have used miss-cut Ge substrate and grown by two-step growth technique to obtain double atomic step. It is shown that without AsH3 pre-flow the surface of GaAs epilayer becomes rougher while it is optically smooth under the longer AsH3 pre-flow. On the other hand, even the surface situation does not change with longer AsH3 pre-flow the structural, optical and crystalline qualities become worse because of the possible presence vacancies of created during the growth. Similar behavior has been observed for the V/III effects of GaAs buffer layer and it has resulted in low full width at half maximum of high-resolution X-ray diffraction and high photoluminescence peak intensity for the optimal V/III ratio. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
dc.relation.isversionof | 10.1016/j.spmi.2019.01.007 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | GaAs | en_US |
dc.subject | Arsine | en_US |
dc.subject | Buffer layer | en_US |
dc.subject | Ge | en_US |
dc.subject | MOVPE | en_US |
dc.title | The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge | en_US |
dc.type | article | en_US |
dc.relation.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
dc.contributor.department | [Demir, Ilkay] Cumhuriyet Univ, Dept Nanotechnol Engn, Nanophoton Res & Applicat Ctr, TR-58140 Sivas, Turkey | en_US |
dc.identifier.volume | 128 | en_US |
dc.identifier.endpage | 8 | en_US |
dc.identifier.startpage | 1 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |