dc.contributor.author | Kasapoglu, E. | |
dc.contributor.author | Sakiroglu, S. | |
dc.contributor.author | Sari, H. | |
dc.contributor.author | Sokmen, I | |
dc.contributor.author | Duque, C. A. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:37:14Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:37:14Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 0921-4526 | |
dc.identifier.issn | 1873-2135 | |
dc.identifier.uri | https://dx.doi.org/10.1016/j.physb.2018.11.006 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/5985 | |
dc.description | WOS: 000457720900013 | en_US |
dc.description.abstract | We have investigated the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s -> 2s absorption coefficient, including the first and third order corrections, in "12-6" tuned GaAs/GaAlAs double quantum well as a function of the impurity position, size of the structure, and the electric and magnetic field intensities. The obtained results show that the electronic and optical properties of tuned GaAs/GaAlAs double quantum well can be adjustable by an appropriate choice of the sample geometry, material parameters and applied external fields which will lead to new potential applications in optoelectronics. | en_US |
dc.description.sponsorship | Colombian Agency: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia); Colombian Agency: Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2017-2018); Cumhuriyet University (CUBAP) [F-557] | en_US |
dc.description.sponsorship | This research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia) and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2017-2018). This work used resources of the Centro Nacional de Processamento de Alto Desempenho em Sao Paulo (CENAPAD-SP). The authors are grateful to The Scientific Research Project Fund of Cumhuriyet University (CUBAP) under the project number F-557. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.relation.isversionof | 10.1016/j.physb.2018.11.006 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Double quantum well | en_US |
dc.subject | Absorption coefficient | en_US |
dc.subject | Donor impurity | en_US |
dc.subject | Electric and magnetic field | en_US |
dc.title | Binding energy and optical absorption of donor impurity states in "12-6" tuned GaAs/GaAlAs double quantum well under the external fields | en_US |
dc.type | article | en_US |
dc.relation.journal | PHYSICA B-CONDENSED MATTER | en_US |
dc.contributor.department | [Kasapoglu, E.] Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey -- [Sakiroglu, S. -- Sokmen, I] Dokuz Eylul Univ, Fac Sci, Phys Dept, TR-35390 Izmir, Turkey -- [Sari, H.] Cumhuriyet Univ, Fac Educ, Dept Math & Nat Sci Educ, TR-58140 Sivas, Turkey -- [Duque, C. A.] Univ Antioquia UdeA, Inst Fis, Fac Ciencias Exactas & Nat, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia | en_US |
dc.identifier.volume | 554 | en_US |
dc.identifier.endpage | 78 | en_US |
dc.identifier.startpage | 72 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |