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dc.contributor.authorRobin, Yoann
dc.contributor.authorDing, Kai
dc.contributor.authorDemir, Ilkay
dc.contributor.authorMcClintock, Ryan
dc.contributor.authorElagoz, Sezai
dc.contributor.authorRazeghi, Manijeh
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:14Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:14Z
dc.date.issued2019
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.urihttps://dx.doi.org/10.1016/j.mssp.2018.09.027
dc.identifier.urihttps://hdl.handle.net/20.500.12418/5990
dc.descriptionWOS: 000450320600014en_US
dc.description.abstractWe report on the fabrication of high brightness AlGaN-based ultraviolet light emitting diodes (UV-LED) on patterned silicon. Using the lateral epitaxial overgrowth approach, we demonstrate the growth of a 6 mu m thick AIN layer of high crystalline quality. X-ray diffraction characterization showed a rocking curve with a full width at half maximum of 553 and 768 '' for the (00.2) and (10.2) planes, respectively. The low dislocation density of the AIN template enabled the growth of bright AlGaN/GaN quantum wells emitting at 336 nm. By appropriate flip-chip bonding and silicon substrate removal processing steps, the patterned AIN surface was exposed and efficient bottom-emission UV-LEDs were realized. Improvement of the AIN quality and the structure design allowed the optical output power to reach the milliwatt range under pulsed current, exceeding the previously reported maximum efficiency. Further investigations of the optical power at different pulsed currents and duty cycles show that thermal management in this device structure is still challenging, especially in continuous wave mode operation. The strategy presented here is of interest, since AIN crystalline quality improvement and optimization of the light extraction are the main issues inhibiting efficient UV emitter on silicon fabrication.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCI LTDen_US
dc.relation.isversionof10.1016/j.mssp.2018.09.027en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleHigh brightness ultraviolet light-emitting diodes grown on patterned silicon substrateen_US
dc.typearticleen_US
dc.relation.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGen_US
dc.contributor.department[Robin, Yoann] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi, Japan -- [Ding, Kai] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Sch Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA -- [Demir, Ilkay -- Elagoz, Sezai] Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Demir, Ilkay -- McClintock, Ryan -- Razeghi, Manijeh] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USAen_US
dc.contributor.authorIDDing, Kai -- 0000-0003-4791-4742en_US
dc.identifier.volume90en_US
dc.identifier.endpage91en_US
dc.identifier.startpage87en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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