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dc.contributor.authorVinasco, J. A.
dc.contributor.authorRadu, A.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorRestrepo, R. L.
dc.contributor.authorMorales, A. L.
dc.contributor.authorFeddi, E.
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorDuque, C. A.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:42Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:42Z
dc.date.issued2018
dc.identifier.issn2045-2322
dc.identifier.urihttps://dx.doi.org/10.1038/s41598-018-31512-4
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6157
dc.descriptionWOS: 000443747000006en_US
dc.descriptionPubMed ID: 30185886en_US
dc.description.abstractThe electronic states in GaAs-AlxGa1-xAs elliptically-shaped quantum rings are theoretically investigated through the numerical solution of the effective mass band equation via the finite element method. The results are obtained for different sizes and geometries, including the possibility of a number of hill-shaped deformations that play the role of either connected or isolated quantum dots (hills), depending on the configuration chosen. The quantum ring transversal section is assumed to exhibit three different geometrical symmetries - squared, triangular and parabolic. The behavior of the allowed confined states as functions of the cross-section shape, the ring dimensions, and the number of hills-like structures are discussed in detail. The effective energy bandgap (photoluminescence peak with electron-hole correlation) is reported as well, as a function of the Al molar fraction.en_US
dc.description.sponsorshipUniversidad EIA; CODI-Universidad de Antioquia; Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia; Colombian Agency \emph{El Patrimonio Autonomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnologia y la Innovacion, Francisco Jose de Caldas-COLCIENCIAS}; Mexican Conacyt [206772]; Universidad de Antioquiaen_US
dc.description.sponsorshipJ. A. Vinasco acknowledges the support and fruitful cooperation with Prof. Dr. A. Radu during his doctoral stay at the Department of Physics, "Politehnica" University of Bucharest, where part of this work was done. This research was partially supported by Colombian Agencies: Universidad EIA, CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia and projects "Efectos de capas delta dopadas en pozos cuanticos como fotodetectores en el infrarrojo" and "Efectos Opticos intersubbanda, no lineales de segundo orden y dispersion Raman, en sistemas asimetricos de pozos cuanticos acoplados"), and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD-exclusive dedication project 2017-2018 and ALM-exclusive dedication project 2018-2019). This work used resources of the Centro Nacional de Processamento de Alto Desempenho em Sao Paulo (CENAPAD-SP). J. A. Vinasco acknowledges the doctoral financial support from the Colombian Agency \emph{El Patrimonio Autonomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnologia y la Innovacion, Francisco Jose de Caldas-COLCIENCIAS}. M. E. Mora-Ramos acknowledges support from Mexican Conacyt through Grant 206772. The authors are grateful to the Universidad EIA and Universidad de Antioquia for financial support through the EIA-UdeA-UdeM-project "Generacion de segundo armonico, rectificacion Optica y dispersion Raman entre estados electronicos en pozos cuanticos acoplados".en_US
dc.language.isoengen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.relation.isversionof10.1038/s41598-018-31512-4en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleEffects of Geometry on the Electronic Properties of Semiconductor Elliptical Quantum Ringsen_US
dc.typearticleen_US
dc.relation.journalSCIENTIFIC REPORTSen_US
dc.contributor.department[Vinasco, J. A. -- Morales, A. L. -- Duque, C. A.] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia -- [Radu, A.] Univ Politehn Bucuresti, Dept Phys, 313 Splaiul Independentei, RO-060042 Bucharest, Romania -- [Kasapoglu, E.] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkey -- [Restrepo, R. L.] Univ EIA, Envigado 055428, Colombia -- [Feddi, E.] Mohammed V Univ Rabat, Grp Optoelect Semicond & Nanomat ENSET, Lab Mat Condensee & Sci Interdisciplinaires LaMCS, Rabat, Morocco -- [Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Av Univ 1001, Cuernavaca 62209, Morelos, Mexicoen_US
dc.contributor.authorIDRestrepo, R. L. -- 0000-0002-0359-353X; Feddi, El mustapha -- 0000-0001-6641-3623en_US
dc.identifier.volume8en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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