dc.contributor.author | Kilic, A. | |
dc.contributor.author | Tansel, T. | |
dc.contributor.author | Hostut, M. | |
dc.contributor.author | Elagoz, S. | |
dc.contributor.author | Ergun, Y. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:37:50Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:37:50Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.issn | 1361-6641 | |
dc.identifier.uri | https://dx.doi.org/10.1088/1361-6641/aad264 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6193 | |
dc.description | WOS: 000439961500001 | en_US |
dc.description.abstract | We report on the optical properties of InAs/AlSb/GaSb based Type-II superlattice N-structure with p on n configuration. The detector structure is designed to operate in the mid wavelength infrared range with 50% cut-off wavelength of 4.88 mu m at 79 K. Electronic properties of N-structure such as heavy hole-light hole splitting energies are optimized by a first principles approach taking into account InAlAs interface bonding between InAs/AlSb layers. A responsivity of 1.13 A/Wat 3.2 mu m was measured under zero bias, with a corresponding quantum efficiency of 44%. An analytical model was developed in order to identify the contribution of quantum efficiency (QE) constituents. The overall QE contains a 56% contribution from the quasi-neutral p-region, 36% from the quasi-neutral n-region and 8% from the depletion region. | en_US |
dc.description.sponsorship | Anadolu University [13005F108]; Akdeniz University [FKA-2015-918] | en_US |
dc.description.sponsorship | The authors would like to thank Prof. Aydinli for critical reading of the manuscript. Y Ergun and A Kilic acknowledge the supports of Anadolu University (BAP Grant: 13005F108). M Hostut also acknowledges the support of Akdeniz University (BAP Grant: FKA-2015-918). | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.relation.isversionof | 10.1088/1361-6641/aad264 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | type-II SL | en_US |
dc.subject | photodetectors | en_US |
dc.subject | N-structure | en_US |
dc.subject | high quantum efficiency | en_US |
dc.title | The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface | en_US |
dc.type | article | en_US |
dc.relation.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.contributor.department | [Kilic, A. -- Ergun, Y.] Anadolu Univ, Dept Phys, Eskisehir, Turkey -- [Tansel, T.] Hacettepe Univ, Inst Nucl Sci, Ankara, Turkey -- [Hostut, M.] Akdeniz Univ, Dept Math & Sci Educ, Antalya, Turkey -- [Elagoz, S.] Cumhuriyet Univ, Dept Nanotechnol Engn, Sivas, Turkey -- [Ergun, Y.] Middle East Tech Univ, METU MEMS Ctr, Ankara, Turkey | en_US |
dc.contributor.authorID | Hokelek, Tuncer -- 0000-0002-8602-4382; Kilic, Abidin -- 0000-0003-4567-5207; Hostut, Mustafa -- 0000-0002-9312-6483; ELAGOZ, Sezai -- 0000-0002-3600-8640 | en_US |
dc.identifier.volume | 33 | en_US |
dc.identifier.issue | 9 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |