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dc.contributor.authorKasapoglu, E.
dc.contributor.authorYesilgul, U.
dc.contributor.authorUngan, F.
dc.contributor.authorSokmen, I.
dc.contributor.authorSari, H.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:37:58Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:37:58Z
dc.date.issued2018
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.urihttps://dx.doi.org/10.1016/j.optmat.2018.02.036
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6228
dc.descriptionWOS: 000438324400021en_US
dc.description.abstracten_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.optmat.2018.02.036en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe effect of the intense laser field on the electronic states I and optical properties of n-type double delta-doped GaAs quantum wells (vol 64, pg 82, 2017)en_US
dc.typeotheren_US
dc.relation.journalOPTICAL MATERIALSen_US
dc.contributor.department[Kasapoglu, E.] Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey -- [Yesilgul, U. -- Ungan, F.] Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35160 Izmir, Turkey -- [Sari, H.] Cumhuriyet Univ, Fac Educ, Dept Primary, TR-58140 Sivas, Turkeyen_US
dc.identifier.volume81en_US
dc.identifier.endpage140en_US
dc.identifier.startpage140en_US
dc.relation.publicationcategoryDiğeren_US


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