dc.contributor.author | Yildirim, Nezir | |
dc.contributor.author | Turut, Abdulmecit | |
dc.contributor.author | Dogan, Hulya | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:38:08Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:38:08Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0218-625X | |
dc.identifier.issn | 1793-6667 | |
dc.identifier.uri | https://dx.doi.org/10.1142/S0218625X18500828 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6273 | |
dc.description | WOS: 000432043300005 | en_US |
dc.description.abstract | The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600 degrees C and 700 degrees C for 1 min. The apparent barrier height Phi(ap) and ideality factor of the diodes were calculated from the forward bias current-voltage characteristic in 60-320 K range. The Phi(ap) values for the nonannealed and 600 degrees C and 700 degrees C annealed diodes were obtained as 0.80, 0.81 and 0.67 eV at 300 K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700 degrees C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the Phi(ap) versus (2kT)(-1) plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | WORLD SCIENTIFIC PUBL CO PTE LTD | en_US |
dc.relation.isversionof | 10.1142/S0218625X18500828 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Metal-semiconductor contacts | en_US |
dc.subject | rectifying behavior | en_US |
dc.subject | Schottky barrier | en_US |
dc.subject | thermal annealing | en_US |
dc.subject | measurement temperature | en_US |
dc.subject | GaAs semiconductor | en_US |
dc.title | CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS | en_US |
dc.type | article | en_US |
dc.relation.journal | SURFACE REVIEW AND LETTERS | en_US |
dc.contributor.department | [Yildirim, Nezir] Bingol Univ, Fac Sci & Arts, Dept Phys, TR-12000 Bingol, Turkey -- [Turut, Abdulmecit] Istanbul Medeniyet Univ, Fac Engn & Nat Sci, Engn Phys Dept, TR-34700 Istanbul, Turkey -- [Dogan, Hulya] Cumhuriyet Univ, Fac Engn, Dept Elect & Elect Engn, TR-58140 Sivas, Turkey | en_US |
dc.contributor.authorID | YILDIRIM, Nezir -- 0000-0002-1864-2269; YILDIRIM, Nezir -- 0000-0002-1864-2269 | en_US |
dc.identifier.volume | 25 | en_US |
dc.identifier.issue | 4 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |