dc.contributor.author | Demir, Ilkay | |
dc.contributor.author | Altuntas, Ismail | |
dc.contributor.author | Bulut, Baris | |
dc.contributor.author | Ezzedini, Maher | |
dc.contributor.author | Ergun, Yuksel | |
dc.contributor.author | Elagoz, Sezai | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:38:15Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:38:15Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0268-1242 | |
dc.identifier.issn | 1361-6641 | |
dc.identifier.uri | https://dx.doi.org/10.1088/1361-6641/aab9d3 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6299 | |
dc.description | WOS: 000430193000001 | en_US |
dc.description.abstract | We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 x 10(19) cm(-3) carrier concentration and 1530 cm(2) V-1 s(-1) mobility. | en_US |
dc.description.sponsorship | Republic of Turkey, Ministry of Science, Industry and Technology-SANTEZ program [0573.STZ.2013-2]; Scientific Research Project Fund of Cumhuriyet University [M-691] | en_US |
dc.description.sponsorship | This study was partially supported by Republic of Turkey, Ministry of Science, Industry and Technology-SANTEZ program under grant number 0573.STZ.2013-2. This work is partially supported by the Scientific Research Project Fund of Cumhuriyet University under the project number M-691. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.relation.isversionof | 10.1088/1361-6641/aab9d3 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | InGaAs | en_US |
dc.subject | MOVPE | en_US |
dc.subject | V/III ratio | en_US |
dc.subject | carrier concentration | en_US |
dc.title | Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications | en_US |
dc.type | article | en_US |
dc.relation.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.contributor.department | [Demir, Ilkay -- Altuntas, Ismail -- Elagoz, Sezai] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Demir, Ilkay -- Altuntas, Ismail -- Bulut, Baris -- Elagoz, Sezai] Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, TR-58140 Sivas, Turkey -- [Bulut, Baris] Ermaksan, Optoelect R&D Ctr, TR-16065 Bursa, Turkey -- [Ezzedini, Maher] Monastir Univ, Lab Microoptoelect & Nanostruct, Monastir 5019, Tunisia -- [Ergun, Yuksel] Anadolu Univ, Dept Phys, TR-26210 Eskisehir, Turkey | en_US |
dc.contributor.authorID | ELAGOZ, Sezai -- 0000-0002-3600-8640 | en_US |
dc.identifier.volume | 33 | en_US |
dc.identifier.issue | 5 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |