| dc.contributor.author | Sheremet, V. | |
| dc.contributor.author | Gheshlaghi, N. | |
| dc.contributor.author | Sozen, M. | |
| dc.contributor.author | Elci, M. | |
| dc.contributor.author | Sheremet, N. | |
| dc.contributor.author | Aydinli, A. | |
| dc.contributor.author | Altuntas, I. | |
| dc.contributor.author | Ding, K. | |
| dc.contributor.author | Avrutin, V. | |
| dc.contributor.author | Ozgur, U. | |
| dc.contributor.author | Morkoc, H. | |
| dc.date.accessioned | 2019-07-27T12:10:23Z | |
| dc.date.accessioned | 2019-07-28T09:38:23Z | |
| dc.date.available | 2019-07-27T12:10:23Z | |
| dc.date.available | 2019-07-28T09:38:23Z | |
| dc.date.issued | 2018 | |
| dc.identifier.issn | 0749-6036 | |
| dc.identifier.uri | https://dx.doi.org/10.1016/j.spmi.2018.02.002 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12418/6330 | |
| dc.description | WOS: 000430037600030 | en_US |
| dc.description.abstract | We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%. (C) 2018 Elsevier Ltd. All rights reserved. | en_US |
| dc.description.sponsorship | Scientific and Technological Research Council of Turkey [113G042]; TUBITAK | en_US |
| dc.description.sponsorship | Financial support for this work is provided by the Scientific and Technological Research Council of Turkey (Grant No: 113G042). Ismail Altuntas acknowledges the Ph.D. Grant support from TUBITAK. We thank UNAM-National Nanotechnology Research Center at Bilkent University for access to fabrication and characterization equipment. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
| dc.relation.isversionof | 10.1016/j.spmi.2018.02.002 | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Light-emitting diode | en_US |
| dc.subject | Step-graded electron injector | en_US |
| dc.subject | Stress compensation layer | en_US |
| dc.subject | InGaN/GaN | en_US |
| dc.title | InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors | en_US |
| dc.type | article | en_US |
| dc.relation.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
| dc.contributor.department | [Sheremet, V. -- Gheshlaghi, N. -- Sozen, M. -- Elci, M. -- Sheremet, N. -- Aydinli, A.] Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey -- [Elci, M.] Middle East Tech Univ, Inst Appl Math, TR-06800 Ankara, Turkey -- [Sheremet, N.] NAS Ukraine, Inst Phys, UA-03680 Kiev, Ukraine -- [Aydinli, A.] Uludag Univ, Dept Elect & Elect Engn, TR-16059 Bursa, Turkey -- [Altuntas, I.] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Ding, K. -- Avrutin, V. -- Ozgur, U. -- Morkoc, H.] Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA | en_US |
| dc.contributor.authorID | Sheremet, Volodymyr -- 0000-0003-0840-5312; Sheremet, Nina -- 0000-0001-6955-1095; Ding, Kai -- 0000-0003-4791-4742 | en_US |
| dc.identifier.volume | 116 | en_US |
| dc.identifier.endpage | 261 | en_US |
| dc.identifier.startpage | 253 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
