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dc.contributor.authorSheremet, V.
dc.contributor.authorGenc, M.
dc.contributor.authorGheshlaghi, N.
dc.contributor.authorElci, M.
dc.contributor.authorSheremet, N.
dc.contributor.authorAydinli, A.
dc.contributor.authorAltuntas, I.
dc.contributor.authorDing, K.
dc.contributor.authorAvrutin, V.
dc.contributor.authorOzgur, U.
dc.contributor.authorMorkoc, H.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:39:33Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:39:33Z
dc.date.issued2018
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2017.11.050
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6547
dc.descriptionWOS: 000425566100069en_US
dc.description.abstractEnhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs. (C) 2017 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [113G042]; TUBITAKen_US
dc.description.sponsorshipFinancial support for this project was provided by the Scientific and Technological Research Council of Turkey (TUBITAK) [Grant No: 113G042]. Ismail Altuntas, acknowledges the Ph.D. Grant support from TUBITAK. We thank to UNAM-National Nanotechnology Research Center at Bilkent University for the use of fabrication and characterization equipment.en_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2017.11.050en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLight emitting diodeen_US
dc.subjectStep graded electron injectoren_US
dc.subjectPassivationen_US
dc.subjectInGaN/GaN multiple quantum wellen_US
dc.subjectSi3N4en_US
dc.titleTwo-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectorsen_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.department[Sheremet, V. -- Gheshlaghi, N. -- Elci, M. -- Sheremet, N. -- Aydinli, A.] Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey -- [Genc, M.] Optoelect R&D Ctr, TR-16065 Ermaksan, Bursa, Turkey -- [Sheremet, N.] Natl Acad Sci Ukraine, Inst Phys, UA-03680 Kiev, Ukraine -- [Aydinli, A.] Uludag Univ, Dept Elect & Elect Engn, TR-16059 Bursa, Turkey -- [Altuntas, I.] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Avrutin, V. -- Ozgur, U. -- Morkoc, H.] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Sch Engn, Med Coll Virginia Campus, Richmond, VA 23284 USAen_US
dc.contributor.authorIDSheremet, Nina -- 0000-0001-6955-1095; Sheremet, Volodymyr -- 0000-0003-0840-5312; Ding, Kai -- 0000-0003-4791-4742; Genc, Muhammet -- 0000-0003-1887-3582en_US
dc.identifier.volume113en_US
dc.identifier.endpage634en_US
dc.identifier.startpage623en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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