dc.contributor.author | Sheremet, V. | |
dc.contributor.author | Genc, M. | |
dc.contributor.author | Elci, M. | |
dc.contributor.author | Sheremet, N. | |
dc.contributor.author | Aydinli, A. | |
dc.contributor.author | Altuntas, I. | |
dc.contributor.author | Ding, K. | |
dc.contributor.author | Avrutin, V. | |
dc.contributor.author | Ozgur, U. | |
dc.contributor.author | Morkoc, H. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:40:03Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:40:03Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | https://dx.doi.org/10.1016/j.spmi.2017.08.026 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6623 | |
dc.description | WOS: 000415768800128 | en_US |
dc.description.abstract | The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in previous models, the topology of LED die and contacts are shown to significantly affect current spreading and light output characteristics in top emitting devices. We propose an approach for calculating the current transfer length describing current spreading. We show that an inter-digitated electrode configuration with distance between the contact pad and the edge of p-n junction equal to transfer length in the current spreading ITO layer allows one to increase the optical area of LED chip, as compared to the physical area of the die, light output power, and therefore, the LED efficiency for a given current density. A detailed study of unpassivated LEDs also shows that current transfer lengths longer than the distance between the contact pad and the edge of p-n junction leads to increasing surface leakage that can only be remedied with proper passivation. (C) 2017 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | TUBITAK [113G042]; Scientific and Technological Research Council of Turkey (TUBITAK) | en_US |
dc.description.sponsorship | This work has been performed with the support of TUBITAK (Grant no: 113G042). Ismail Altuntas, acknowledges the Ph.D. Grant support from the Scientific and Technological Research Council of Turkey (TUBITAK). | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
dc.relation.isversionof | 10.1016/j.spmi.2017.08.026 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | InGaN/GaN multiple quantum well | en_US |
dc.subject | LED | en_US |
dc.subject | Indium Tin Oxide | en_US |
dc.subject | Current spreading | en_US |
dc.title | The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes | en_US |
dc.type | article | en_US |
dc.relation.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
dc.contributor.department | [Sheremet, V. -- Elci, M. -- Aydinli, A.] Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey -- [Genc, M.] Optoelectron R&D Ctr, Ermaksan, TR-16065 Bursa, Turkey -- [Sheremet, N.] Natl Acad Sci Ukraine, Inst Phys, UA-03680 Kiev, Ukraine -- [Aydinli, A.] Uludag Univ, Dept Elect & Elect Engn, TR-16059 Bursa, Turkey -- [Altuntas, I.] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Ding, K. -- Avrutin, V. -- Ozgur, U. -- Morkoc, H.] Virginia Commonwealth Univ, Sch Engn, Dept Elect & Comp Engn, Richmond, VA 23284 USA | en_US |
dc.contributor.authorID | Sheremet, Volodymyr -- 0000-0003-0840-5312; Sheremet, Nina -- 0000-0001-6955-1095; Genc, Muhammet -- 0000-0003-1887-3582; Ding, Kai -- 0000-0003-4791-4742 | en_US |
dc.identifier.volume | 111 | en_US |
dc.identifier.endpage | 1194 | en_US |
dc.identifier.startpage | 1177 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |