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dc.contributor.authorTuzemen, A. T.
dc.contributor.authorEsen, M.
dc.contributor.authorOzdemir, M.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:40:48Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:40:48Z
dc.date.issued2017
dc.identifier.issn0022-0248
dc.identifier.issn1873-5002
dc.identifier.urihttps://dx.doi.org/10.1016/j.jcrysgro.2017.04.022
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6726
dc.descriptionWOS: 000405879500015en_US
dc.description.abstractA surface below its roughening temperature consisting of two dimensional concentric circular monoatomic steps is discussed under step-flow model. Entropic interactions between the steps are considered and the diffusion equation is solved in two dimensional polar coordinates. It is assumed that the local mass transfer occurs due to surface diffusion only during the evolution of the initial surface. The evolution of initial surfaces bounded by both a sinusoidal and other envelope functions of the form x(gamma) are considered. The evolution of the height of surface as a function of time is analyzed for each surface in Diffusion Limited (DL) regime. We have determined three scaling characteristics of evolution of the height of the surface. For an initial sinusoidal surface profile we have the following findings: The height of surface approximately decreases as tau(alpha) where a is independent of wavelength and initial height of the surface. The time dependence of the evolution of the height scales with the cube of the wavelength of the initial surface. Finally the normalized height of the initial surfaces of different amplitudes with the same wavelength scales linearly with the amplitude as a function of time. Similar findings are obtained for non sinusoidal initial surfaces also. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.jcrysgro.2017.04.022en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCrystal morphologyen_US
dc.subjectDiffusionen_US
dc.subjectMass transferen_US
dc.subjectSurface structureen_US
dc.subjectSurface processesen_US
dc.subjectSemiconducting materialsen_US
dc.titleScaling properties of equilibrating semiconductor mounds of various initial shapesen_US
dc.typearticleen_US
dc.relation.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.contributor.department[Tuzemen, A. T.] Cumhuriyet Univ, Dept Math & Sci Educ, Fac Educ, TR-58140 Sivas, Turkey -- [Esen, M.] Cukurova Univ, Vocat Sch Adana, TR-01160 Adana, Turkey -- [Ozdemir, M.] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkeyen_US
dc.identifier.volume470en_US
dc.identifier.endpage98en_US
dc.identifier.startpage94en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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