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dc.contributor.authorSari, H.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSakiroglu, S.
dc.contributor.authorYesilgul, U.
dc.contributor.authorUngan, F.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:41:12Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:41:12Z
dc.date.issued2017
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.urihttps://dx.doi.org/10.1016/j.physe.2017.03.030
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6777
dc.descriptionWOS: 000401386400032en_US
dc.description.abstractIn the present work, the effects of the non-resonant intense laser field, electric and magnetic fields on the optical properties, such as linear, third order nonlinear and the total optical absorption coefficient and refractive index changes associated with the intersubband transitions between the ground and the first excited states in the n-type double delta-doped GaAs quantum well is theoretically studied by solving the Schrodinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The analytical expressions of the linear and third-order nonlinear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. Our numerical results show that the optical absorption coefficient and refractive index change are quite sensitive to the applied external fields, such as non resonant intense laser field, electric and magnetic fields. The obtained results can be applied for the design of various optoelectronic devices based on the intersubband transitions of electrons.en_US
dc.language.isowelen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.physe.2017.03.030en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectdelta-doped quantum wellen_US
dc.subjectNonlinear optical propertiesen_US
dc.subjectIntense laser fielden_US
dc.subjectElectric and magnetic fieldsen_US
dc.titleCombined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double delta-doped GaAs quantum wellen_US
dc.typearticleen_US
dc.relation.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.contributor.department[Sari, H.] Cumhuriyet Univ, Dept Math & Nat Sci Educ, Fac Educ, TR-58140 Sivas, Turkey -- [Kasapoglu, E.] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkey -- [Sakiroglu, S. -- Sokmen, I.] Dokuz Eylul Univ, Dept Phys, Fac Sci, TR-35160 Izmir, Turkey -- [Yesilgul, U. -- Ungan, F.] Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, Turkeyen_US
dc.identifier.volume90en_US
dc.identifier.endpage217en_US
dc.identifier.startpage214en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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