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dc.contributor.authorSari, H.
dc.contributor.authorYesilgul, U.
dc.contributor.authorUngan, F.
dc.contributor.authorSakiroglu, S.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorSokmen, I.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:41:25Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:41:25Z
dc.date.issued2017
dc.identifier.issn0301-0104
dc.identifier.issn1873-4421
dc.identifier.urihttps://dx.doi.org/10.1016/j.chemphys.2017.02.004
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6803
dc.descriptionWOS: 000399850000002en_US
dc.description.abstractIn this paper, we have investigated the effects of the non-resonant intense laser field on the electronic and optical properties such as linear, nonlinear and the total optical absorption coefficient and refractive index change for transitions between two lower-lying electronic states in the GaAs-based delta-doped quantum well. Within the effective mass approximation, we calculated the eigenvalues and corresponding eigenfunctions as a function of the intense laser parameter by solving the Schrodinger equation in the laser-dressed confinement potential. The analytical expressions of the linear and third-order non-linear optical absorption coefficients and refractive index changes are obtained by using the compact-density matrix formalism. The obtained results show that the separation between ground and first excited energy levels in the delta-doped quantum well decreases in energy by the increase of the laser field intensity and this effect leads to an optical red-shift in the intersubband transitions. This behavior gives us a new degree of freedom in tunability of different device applications based on the optical transitions. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.chemphys.2017.02.004en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectdelta-Doped quantum wellen_US
dc.subjectNonlinear optical propertiesen_US
dc.subjectIntense laser fielden_US
dc.titleIntense laser field effects on the intersubband optical absorption and refractive index change in the delta-doped GaAs quantum wellsen_US
dc.typearticleen_US
dc.relation.journalCHEMICAL PHYSICSen_US
dc.contributor.department[Sari, H.] Cumhuriyet Univ, Dept Primary, Fac Educ, TR-58140 Sivas, Turkey -- [Yesilgul, U. -- Ungan, F.] Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, Turkey -- [Sakiroglu, S. -- Sokmen, I.] Dokuz Eylul Univ, Dept Phys, Fac Sci, TR-35160 Izmir, Turkey -- [Kasapoglu, E.] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkeyen_US
dc.identifier.volume487en_US
dc.identifier.endpage15en_US
dc.identifier.startpage11en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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