dc.contributor.author | Demir, Ilkay | |
dc.contributor.author | Robin, Yoann | |
dc.contributor.author | McClintock, Ryan | |
dc.contributor.author | Elagoz, Sezai | |
dc.contributor.author | Zekentes, Konstantinos | |
dc.contributor.author | Razeghi, Manijeh | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:41:30Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:41:30Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 1862-6300 | |
dc.identifier.issn | 1862-6319 | |
dc.identifier.uri | https://dx.doi.org/10.1002/pssa.201600363 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6813 | |
dc.description | E-MRS Spring Symposium L on E Wide Bandgap Materials for Electron Devices -- MAY, 2016 -- Lille, FRANCE | en_US |
dc.description | WOS: 000402158300007 | en_US |
dc.description.abstract | AlN layers have been grown on 200 nm period of nano-patterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. The material quality of 5-10 mu m thick AlN grown by LEO is comparable to that of much thinner layers (2 mu m) grown by cantilever epitaxy on the nanopatterned substrates. Indeed, the latter exhibited root mean square (RMS) roughness of 0.65 nm and X-ray diffraction full width at half-maximum (FWHM) of 710 arcsec along the (0002) reflection and 930 arcsec along the (10-15) reflection. The corresponding room temperature photoluminescence spectra was dominated by a sharp band edge peak. Back emission ultra violet light emitting diodes (UV LEDs) were fabricated by flip chip bonding to patterned AlN heat sinks followed by complete Si (111) substrate removal demonstrating a peak pulsed power of similar to 0.7mW at 344 nm peak emission wavelength. The demonstrated UV LEDs were fabricated on a cost effective epitaxial structure grown on the nanopatterned Si substrate with a total thickness of 3.3 mu m. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
dc.description.sponsorship | E MRS | en_US |
dc.description.sponsorship | Scientific and Technological Research Council of Turkey (TUBITAK) [2214/A]; Fulbright organization | en_US |
dc.description.sponsorship | The authors acknowledge Dr. Richard LaMarca and Dr. Tariq Manzur of the Naval Air Warfare Center (NAVAIR) and Dr. Peter Craig (ONR) for their support and encouragement. Ilkay Demir acknowledges the Ph.D. grant support (2214/A) from the Scientific and Technological Research Council of Turkey (TUBITAK). K. Zekentes acknowledges funding from Fulbright organization. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.relation.isversionof | 10.1002/pssa.201600363 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | AlN | en_US |
dc.subject | cantilever epitaxy | en_US |
dc.subject | light emitting diodes | en_US |
dc.subject | MOCVD | en_US |
dc.subject | nanopatterning | en_US |
dc.subject | silicon | en_US |
dc.title | Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy | en_US |
dc.type | article | en_US |
dc.relation.journal | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | en_US |
dc.contributor.department | [Demir, Ilkay -- Robin, Yoann -- McClintock, Ryan -- Zekentes, Konstantinos -- Razeghi, Manijeh] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA -- [Demir, Ilkay -- Elagoz, Sezai] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Zekentes, Konstantinos] Fdn Res & Technol Hellas FORTH, IESL, Iraklion 1527, Greece | en_US |
dc.identifier.volume | 214 | en_US |
dc.identifier.issue | 4 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |