dc.contributor.author | Demir, Ilkay | |
dc.contributor.author | Elagoz, Sezai | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:41:33Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:41:33Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | https://dx.doi.org/10.1016/j.spmi.2017.02.022 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6818 | |
dc.description | WOS: 000400536000016 | en_US |
dc.description.abstract | In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x)A(1-x)As layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the VIII ratio with fixed metalorganic precursor flow is a crucial parameter on In In(x)A(1-x)As layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping. (C) 2017 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | Republic of Turkey, Ministry of Science, Industry and Technology-SANTEZ program [0573.STZ.2013-2]; TUBITAK PhD Program fellowship [BIDEB-2211] | en_US |
dc.description.sponsorship | This study was partially supported by Republic of Turkey, Ministry of Science, Industry and Technology-SANTEZ program under grant number 0573.STZ.2013-2. Ilkay Demir acknowledges the support through TUBITAK PhD Program fellowship BIDEB-2211 Grant. The authors thank Ms. A. Alev Kizilbulut from ERMAKSAN Optoelectronics for PL measurements. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
dc.relation.isversionof | 10.1016/j.spmi.2017.02.022 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | V/III ratio | en_US |
dc.subject | InAlAs | en_US |
dc.subject | MOCVD | en_US |
dc.subject | Quantum cascade lasers | en_US |
dc.title | V/III ratio effects on high quality InAlAs for quantum cascade laser structures | en_US |
dc.type | article | en_US |
dc.relation.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
dc.contributor.department | [Demir, Ilkay -- Elagoz, Sezai] Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey | en_US |
dc.identifier.volume | 104 | en_US |
dc.identifier.endpage | 148 | en_US |
dc.identifier.startpage | 140 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |