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dc.contributor.authorDemir, Ilkay
dc.contributor.authorElagoz, Sezai
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:41:33Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:41:33Z
dc.date.issued2017
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2017.02.022
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6818
dc.descriptionWOS: 000400536000016en_US
dc.description.abstractIn this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown In(x)A(1-x)As layers, a part of Quantum Cascade Laser (QCL) structures, on InP substrate. Especially photoluminescence (PL) properties of InAlAs-InP interface show strong dependence on AsH3 overpressure. We have shown that the VIII ratio with fixed metalorganic precursor flow is a crucial parameter on In In(x)A(1-x)As layers to have a good material quality in terms of crystallinity, optical and electrical characteristics with and without doping. (C) 2017 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipRepublic of Turkey, Ministry of Science, Industry and Technology-SANTEZ program [0573.STZ.2013-2]; TUBITAK PhD Program fellowship [BIDEB-2211]en_US
dc.description.sponsorshipThis study was partially supported by Republic of Turkey, Ministry of Science, Industry and Technology-SANTEZ program under grant number 0573.STZ.2013-2. Ilkay Demir acknowledges the support through TUBITAK PhD Program fellowship BIDEB-2211 Grant. The authors thank Ms. A. Alev Kizilbulut from ERMAKSAN Optoelectronics for PL measurements.en_US
dc.language.isoengen_US
dc.publisherACADEMIC PRESS LTD- ELSEVIER SCIENCE LTDen_US
dc.relation.isversionof10.1016/j.spmi.2017.02.022en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectV/III ratioen_US
dc.subjectInAlAsen_US
dc.subjectMOCVDen_US
dc.subjectQuantum cascade lasersen_US
dc.titleV/III ratio effects on high quality InAlAs for quantum cascade laser structuresen_US
dc.typearticleen_US
dc.relation.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.contributor.department[Demir, Ilkay -- Elagoz, Sezai] Cumhuriyet Univ, Nanophoton Res & Applicat Ctr, Dept Nanotechnol Engn, TR-58140 Sivas, Turkeyen_US
dc.identifier.volume104en_US
dc.identifier.endpage148en_US
dc.identifier.startpage140en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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