dc.contributor.author | Kasapoglu, E. | |
dc.contributor.author | Yesilgul, U. | |
dc.contributor.author | Ungan, F. | |
dc.contributor.author | Sokmen, I. | |
dc.contributor.author | Sari, H. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:44:01Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:44:01Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0925-3467 | |
dc.identifier.issn | 1873-1252 | |
dc.identifier.uri | https://dx.doi.org/10.1016/j.optmat.2016.11.041 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/6860 | |
dc.description | WOS: 000394635200014 | en_US |
dc.description.abstract | In this work, within the effective mass approximation we have performed a theoretical study of electronic states, the intersubband-related optical absorption coefficient and relative refractive index change properties in the GaAs-based double delta-doped quantum well under non-resonant intense laser field. By solving the Schrodinger equation in the laser-dressed confinement potential, We calculated eigenvalues and corresponding eigenfunctions as an intense laser parameter. We concluded that the separation between ground and first excited energy levels in the double delta-doped quantum well increases in energy by the increase of the laser field intensity and this effect leads to an optical blue-shift in intersubband transitions. Therefore a significant tunability of the optical transitions in double delta-doped quantum well can be achieved by modulating the intensity of the intense laser field. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.relation.isversionof | 10.1016/j.optmat.2016.11.041 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Double delta-doped quantum well | en_US |
dc.subject | Nonlinear optical properties | en_US |
dc.subject | Intense laser field | en_US |
dc.title | The effect of the intense laser field on the electronic states and optical properties of n-type double delta-doped GaAs quantum wells | en_US |
dc.type | article | en_US |
dc.relation.journal | OPTICAL MATERIALS | en_US |
dc.contributor.department | [Kasapoglu, E.] Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey -- [Yesilgul, U. -- Ungan, F.] Cumhuriyet Univ, Fac Technol, Dept Opt Engn, TR-58140 Sivas, Turkey -- [Sokmen, I.] Dokuz Eylul Univ, Fac Sci, Dept Phys, TR-35160 Buca Izmir, Izmir, Turkey -- [Sari, H.] Cumhuriyet Univ, Fac Educ, Dept Primary, TR-58140 Sivas, Turkey | en_US |
dc.identifier.volume | 64 | en_US |
dc.identifier.endpage | 87 | en_US |
dc.identifier.startpage | 82 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |