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Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

dc.contributor.authorTiutiunnyk, A.
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorMorales, A. L.
dc.contributor.authorDuque, C. M.
dc.contributor.authorRestrepo, R. L.
dc.contributor.authorUngan, F.
dc.contributor.authorMartinez-Orozco, J. C.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorDuque, C. A.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:44:01Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:44:01Z
dc.date.issued2017
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.urihttps://dx.doi.org/10.1016/j.optmat.2017.01.001
dc.identifier.urihttps://hdl.handle.net/20.500.12418/6861
dc.descriptionWOS: 000394635200076en_US
dc.description.abstractIn this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,AI)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm(-1). The system proposed here is an alternative choice for the development of Al chi Ga1-chi As semiconductor laser diodes that can be tuned via an external nonresonant intense laser field. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipColombian Agencies: CODI-; Mexican PRODEP for a Posdoctoral Grant [09/2016-08/2017]; Universidad EIA; Universidad de Antioquia through the EIA-UdeA-UdeM-project "Propiedades Opto-electronicas de sistemas altamente confinados: Una aproximaciOn teorica"; Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD and ALM-exclusive dedication projects 2016-2017)en_US
dc.description.sponsorshipThis research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia and projects: "Propiedades opticas de impurezas, excitones y moleculas en puntos cuanticos autoensamblados" and "On the way to development of new concept of nanostructure-based THz laser") and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD and ALM-exclusive dedication projects 2016-2017). AT thanks Mexican PRODEP for a Posdoctoral Grant 09/2016-08/2017. CAD and RLR are grateful to Universidad EIA and Universidad de Antioquia for financial support through the EIA-UdeA-UdeM-project "Propiedades Opto-electronicas de sistemas altamente confinados: Una aproximaciOn teorica".en_US
dc.language.isoengen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.isversionof10.1016/j.optmat.2017.01.001en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIntense laser fielden_US
dc.subjectQuantum wellen_US
dc.subjectRaman scatteringen_US
dc.titleElectron Raman scattering in a double quantum well tuned by an external nonresonant intense laser fielden_US
dc.typearticleen_US
dc.relation.journalOPTICAL MATERIALSen_US
dc.contributor.department[Tiutiunnyk, A. -- Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Av Univ 1001, Cuernavaca 62209, Morelos, Mexico -- [Tiutiunnyk, A. -- Morales, A. L. -- Duque, C. M. -- Duque, C. A.] Univ Antioquia UdeA, Fac Ciencias Exactas & Nat, Inst Fis, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia -- [Restrepo, R. L.] Univ EIA, Envigado 055428, Colombia -- [Ungan, F.] Cumhuriyet Univ, Dept Opt Engn, Fac Technol, TR-58140 Sivas, Turkey -- [Martinez-Orozco, J. C.] Univ Autonoma Zacatecas, Unidad Acad Fis, Calzada Solidaridad Esquina Paseo Bufa S-N, Zacatecas 98060, Zac, Mexico -- [Kasapoglu, E.] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkeyen_US
dc.contributor.authorIDRestrepo, R. L. -- 0000-0002-0359-353X; Tiutiunnyk, Anton -- 0000-0003-1692-5561; Martinez-Orozco, J. C. -- 0000-0001-8373-1535; Martinez-Orozco, J. C. -- 0000-0001-8373-1535en_US
dc.identifier.volume64en_US
dc.identifier.endpage501en_US
dc.identifier.startpage496en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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