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dc.contributor.authorLondono, M. A.
dc.contributor.authorRestrepo, R. L.
dc.contributor.authorOjeda, J. H.
dc.contributor.authorHuynh Vinh Phuc
dc.contributor.authorMora-Ramos, M. E.
dc.contributor.authorKasapoglu, E.
dc.contributor.authorMorales, A. L.
dc.contributor.authorDuque, C. A.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:44:21Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:44:21Z
dc.date.issued2017
dc.identifier.issn1687-4110
dc.identifier.issn1687-4129
dc.identifier.urihttps://dx.doi.org/10.1155/2017/5970540
dc.identifier.urihttps://hdl.handle.net/20.500.12418/7031
dc.descriptionWOS: 000398405000001en_US
dc.description.abstractThe conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations using two different numerical approaches: a spectral scheme and the finite element method. The resulting energies and wave functions become the basic information needed to evaluate the interstate optical absorption in the system, which is reported as a function of the geometry, the electric field strength, and the temperature.en_US
dc.description.sponsorshipVietnam National Foundation for Science and Technology Development (NAFOSTED) [103.01-2015.93]; Migracion Sismica Pre-Apilado en Profundidad por Extrapolacion de Campos de Onda Utilizando Computacion de Alto Desempeno para Datos Masivos en Zonas Complejas [111553130555]en_US
dc.description.sponsorshipThis research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under Grant no. 103.01-2015.93. The authors are grateful to the Colombian Agencies CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia) and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (C.A. Duque and A.L. Morales Exclusive Dedication Projects 2016-2017). M.A. Londono is grateful to Colciencias-Ecopetrol for financial support through the project Migracion Sismica Pre-Apilado en Profundidad por Extrapolacion de Campos de Onda Utilizando Computacion de Alto Desempeno para Datos Masivos en Zonas Complejas (Code 111553130555).en_US
dc.language.isoengen_US
dc.publisherHINDAWI LTDen_US
dc.relation.isversionof10.1155/2017/5970540en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleDonor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dotsen_US
dc.typearticleen_US
dc.relation.journalJOURNAL OF NANOMATERIALSen_US
dc.contributor.department[Londono, M. A.] Univ Antioquia UdeA, Inst Matemat, Fac Ciencias Exactas & Nat, Calle 70 52-21, Medellin, Colombia -- [Restrepo, R. L.] Univ EIA, Envigado 055428, Colombia -- [Ojeda, J. H.] Univ Pedag & Tecnol Colombia, Grp Fis & Mat, Tunja, Colombia -- [Huynh Vinh Phuc] Dong Thap Univ, Div Theoret Phys, Dong Thap, Vietnam -- [Mora-Ramos, M. E.] Univ Autonoma Estado Morelos, Ctr Invest Ciencias IICBA, Av Univ 1001, Cuernavaca 62209, Mor, Mexico -- [Kasapoglu, E.] Cumhuriyet Univ, Dept Phys, Fac Sci, TR-58140 Sivas, Turkey -- [Morales, A. L. -- Duque, C. A.] Univ Antioquia UdeA, Grp Mat Condensada UdeA, Inst Fis, Fac Ciencias Exactas & Nat, Calle 70 52-21, Medellin, Colombiaen_US
dc.contributor.authorIDPhuc, Huynh V. -- 0000-0001-8063-0923; Restrepo, R. L. -- 0000-0002-0359-353Xen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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