Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells
Abstract
The effects of nitrogen and indium concentrations on the 1s, 2s, 2p(0) and 2p +/--like donor impurity energy states in a single Ga1-xInxNyAs1-y/GaAs quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.
Source
INTERNATIONAL JOURNAL OF MODERN PHYSICS BVolume
30Issue
22Collections
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