dc.contributor.author | Tansel, T. | |
dc.contributor.author | Hostut, M. | |
dc.contributor.author | Elagoz, S. | |
dc.contributor.author | Kilic, A. | |
dc.contributor.author | Ergun, Y. | |
dc.contributor.author | Aydinli, A. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:45:54Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:45:54Z | |
dc.date.issued | 2016 | |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | https://dx.doi.org/10.1016/j.spmi.2015.12.034 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/7424 | |
dc.description | WOS: 000372559600001 | en_US |
dc.description.abstract | Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AISb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors. (C) 2016 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | Anadolu University (BAP) [13005F108]; Akdeniz University (BAP) [FKA-2015-918] | en_US |
dc.description.sponsorship | Y.Ergun and A. Kilic acknowledge the supports of Anadolu University (BAP Grant: 13005F108). Author M. Hostut also acknowledges the supports of Akdeniz University (BAP Grant: FKA-2015-918). | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | en_US |
dc.relation.isversionof | 10.1016/j.spmi.2015.12.034 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Superlattice | en_US |
dc.subject | InAs/AlSb/GaSb based T2SL N-structures with AlSb | en_US |
dc.subject | Mid wavelength infrared | en_US |
dc.title | Electrical performance of InAs/AlSb/GaSb superlattice photodetectors | en_US |
dc.type | article | en_US |
dc.relation.journal | SUPERLATTICES AND MICROSTRUCTURES | en_US |
dc.contributor.department | [Tansel, T.] Hacettepe Univ, Inst Nucl Sci, Ankara, Turkey -- [Hostut, M.] Akdeniz Univ, Div Phys Educ, Fac Educ, Antalya, Turkey -- [Elagoz, S.] Cumhuriyet Univ, Dept Nanotechnol Engn, Sivas, Turkey -- [Kilic, A. -- Ergun, Y.] Anadolu Univ, Dept Phys, Eskisehir, Turkey -- [Aydinli, A.] Bilkent Univ, Dept Phys, Ankara, Turkey | en_US |
dc.contributor.authorID | Hokelek, Tuncer -- 0000-0002-8602-4382; Hostut, Mustafa -- 0000-0002-9312-6483; Kilic, Abidin -- 0000-0003-4567-5207 | en_US |
dc.identifier.volume | 91 | en_US |
dc.identifier.endpage | 7 | en_US |
dc.identifier.startpage | 1 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |